2SK2275
Description
The 2SK2275 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ± 0.3 4.5 ± 0.2 2.7 ± 0.2.
Key Features
- Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A) 3 ± 0.1 1 2 3 4 ± 0.2 12.0 ± 0.2 13.5 MIN. 0.65 ± 0.1 LOW Ciss Ciss = 1 000 pF TYP. High Avalanche Capability Ratings
