2SK2461 Datasheet | NEC

DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES - Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) 15.0 ±0.3 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5MIN. RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A) - Low Ciss Ciss = 1400 p F TYP. - Built-in G-S Gate Protection Diodes - High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)- VDSS VGSS ID(DC) ID(pulse) 100 ± 20 ± 20 ± 80 35 2.0 150 20 40 V V A A W W ˚C A m J 0.7 ±0.1 2.54 1.3 ±0.2 1.5 ±0.2 2.54 2.5 ±0.1 0.65 ±0.1 Total Power Dissipation (Tc = 25 ˚C) PT1 Total Power Dissipation (TA = 25 ˚C) PT2 Channel Temperature Storage Temperature Single Avalanche Current- - Single Avalanche Energy- - - PW ≤ 10 µs, Duty Cycle ≤ 1 % Tch Tstg IAS EAS 1. Gate 2. Drain 3. Source 1 2 3 - 55 to +150 ˚C MP-45F (ISOLATED TO-220) Drain - - Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Body Diode Gate Gate Protection Diode Source Document No. TC-2529 (O. D. No. TC-8078) Date Published April 1995 P Printed in Japan © ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 1400 470 150 21 110 140 110 51 4.9 15 1.1 170 770 1.0 12 MIN. TYP. 58 70 1.7 19 10 ± 10 MAX. 80 100 2.0 UNIT mΩ mΩ V S TEST CONDITIONS VGS = 10 V, ID = 10 A...