2SK2941 Overview
Key Specifications
Description
This product is n-Chanel MOS Field Effect Transistor designed high current switching application. PACKAGE DIMENSIONS inmillimeters 3.0±0.3.
Key Features
- Low On-Resistance RDS(on)1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A) RDS(on)2 = 22 mΩ Typ. (VGS = 4 V, ID = 18 A)