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2SK3109 - N-Channel MOSFET

General Description

The 2SK3109 is N channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, and designed for high voltage.

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Datasheet Details

Part number 2SK3109
Manufacturer NEC
File Size 77.11 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3109 Datasheet

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. ORDERING INFORMATION PART NUMBER 2SK3109 2SK3109-S 2SK3109-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 5.0 A) • Low input capacitance Ciss = 400 pF TYP.