Datasheet4U Logo Datasheet4U.com

2SK3793 - SWITCHING N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A).
  • Low C iss: C iss = 900 pF TYP.
  • Built-in gate protection diode (Isolated TO-220).

📥 Download Datasheet

Datasheet preview – 2SK3793

Datasheet Details

Part number 2SK3793
Manufacturer NEC
File Size 209.96 KB
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK3793 Datasheet
Additional preview pages of the 2SK3793 datasheet.

📁 Similar Datasheet

  • 2SK3793 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3796 - N-Channel Junction Silicon FET (Sanyo Semicon Device)
  • 2SK3796 - N-Channel JFET (ON Semiconductor)
  • 2SK3797 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3797 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3798 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3798 - N-Channel MOSFET (INCHANGE)
  • 2SK3799 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3799 - N-Channel MOSFET (INCHANGE)
  • 2SK370 - N-Channel MOSFET (Toshiba Semiconductor)
Other Datasheets by NEC
  • 2SK3794 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3712 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3713 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3714 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3715 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3716 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3717 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3718 - SWITCHING N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3793 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3793 PACKAGE Isolated TO-220 FEATURES • Super low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A) • Low C iss: C iss = 900 pF TYP. • Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 100 ±20 ±12 ±22 20 2.
Published: |