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  NEC Electronic Components Datasheet  

325S01 Datasheet

NONLINEAR MODEL

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NONLINEAR MODEL NE325S01
SCHEMATIC
GATE
CGD_PKG
0.001pF
Ldx
Lgx
Rgx 0.69nH
6 ohms
CGS_PKG
0.07pF
Q1 0.6nH Rdx
6 ohms
Lsx
0.07nH
Rsx
0.06 ohms
DRAIN
CDS_PKG
0.05PF
FET NONLINEAR MODEL PARAMETERS (1)
Parameters
VTO
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
Q
DELTA
VBI
IS
N
RIS
RID
TAU
CDS
RDB
CBS
CGSO
CGDO
DELTA1
DELTA2
FC
VBR
Q1
-0.8
0
8
0.103
0.092
0.08
2
1
0.715
3e-13
1.22
0
0
4e-12
0.13e-12
5000
1e-9
0.3e-12
0.02e-12
0.3
0.1
0.5
Infinity
Parameters
RG
RD
RS
RGMET
KF
AF
TNOM
XTI
EG
VTOTC
BETATCE
FFE
Q1
3
2
2
0
0
1
27
3
1.43
0
0
1
SOURCE
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
MODEL RANGE
Frequency:
Bias:
Date:
0.1 to 18 GHz
VDS = 1 V to 3 V, ID = 5 mA to 30 mA
IDSS = 59.9 ma @ VGS = 0, VDS = 2 V
2/98
(1) Series IV Libra TOM Model
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
PRINTED IN USA ON RECYCLED PAPER -10/98


Part Number 325S01
Description NONLINEAR MODEL
Maker NEC
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