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  NEC Electronic Components Datasheet  

A1647 Datasheet

SILICON POWER TRANSISTOR

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The 2SA1647 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Low collector saturation voltage:
VCE(sat) = 0.3 V MAX. (@IC = 3 A)
• Fast switching speed:
tf = 0.4 µs MAX. (@IC = 3 A)
• High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Collector to base voltage
VCBO
150
Collector to emitter voltage
VCEO
100
Base to emitter voltage
VEBO
7.0
Collector current (DC)
IC(DC)
5.0
Collector current (pulse)
IC(pulse)*
10
Base current (DC)
IB(DC)
2.5
Total power dissipation
PT (Tc = 25 °C)
18
Total power dissipation
PT (TA = 25 °C) 1.0**, 2.0***
Junction temperature
Tj 150
Storage temperature
Tstg 55 to +150
*: PW 10 ms, duty cycle 50%
**: Printing board mounted
***: 7.5 mm × 0.7 mm ceramic board mounted
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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©
2002


  NEC Electronic Components Datasheet  

A1647 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SA1647, 2SA1647-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage VCEO(SUS) IC = 2.5 A, IB = 0.25 A, L = 1 mH
Collector to emitter voltage
VCEX(SUS) IC = 2.5 A, IB1 = IB2 = 0.25 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
Collector cutoff current
ICBO VCB = 100 V, IE = 0
Collector cutoff current
ICER VCE = 100 V, RBE = 50 , TA = 125 °C
Collector cutoff current
ICEX1
VCE = 100 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = 100 V, VBE(OFF) = 1.5 V,
TA = 125 °C
Emitter cutoff current
IEBO
VEB(OFF) = 5.0 V, IC = 0
DC current gain
hFE1* VCE = 2.0 V, IC = 0.5 A
DC current gain
hFE2* VCE = 2.0 V, IC = 1.0 A
DC current gain
hFE3* VCE = 2.0 V, IC = 3.0 A
Collector saturation voltage VCE(sat)1* IC = 3.0 A, IB = 0.15 A
Collector saturation voltage VCE(sat)2* IC = 4.0 A, IB = 0.2 A
Base saturation voltage
VBE(sat)1* IC = 3.0 A, IB = 0.15 A
Base saturation voltage
VBE(sat)2* IC = 4.0 A, IB = 0.2 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IC = 0.5 A
Turn-on time
Storage time
Fall time
ton IC = 3.0 A, RL = 17 ,
tstg IB1 = IB2 = 0.15 A, VCC ≅ −50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, duty cycle 2%/Pulsed
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME TEST CIRCUIT
MIN.
100
100
100
100
60
TYP.
110
90
MAX.
10
1.0
10
1.0
10
400
0.3
0.5
1.2
1.5
0.3
1.5
0.4
Unit
V
V
µA
mA
µA
mA
µA
V
V
V
V
pF
MHz
µs
µs
µs
Base current
waveform
Collector current
waveform
2 Data Sheet D14839EJ2V0DDS


Part Number A1647
Description SILICON POWER TRANSISTOR
Maker NEC
Total Page 6 Pages
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