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  NEC Electronic Components Datasheet  

A1841 Datasheet

PNP SILICON EPITAXIAL TRANSISTOR

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DATA SHEET
DARLINGTON POWER TRANSISTOR
2SA1841
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DESCRIPTION
The 2SA1841 is a high-speed Darlington power transistor.
This transistor is ideal for high-precision control such as PWM
control for pulse motors brushless motors in OA and FA equipment.
In addition, this transistor features a package that can be auto-
mounted in radial taping specifications, thus contributing to
mounting cost reduction.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SA1841
MP-10
FEATURES
Auto-mounting possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
High DC current amplifiers due to Darlington connection
hFE = 4000 to 20000 (VCE = 2.0 V, IC = 4.0 A)
On-chip C-to-E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
Collector Current (pulse)
IC(DC)
IC(pulse) Note
Base Current (DC)
IB(DC)
Total Power Dissipation (TA = 25°C)
PT
Junction Temperature
Tj
Storage Temperature
Tstg
Note PW 10 ms, Duty Cycle 2%
100
100
8.0
8.0
16
0.8
1.8
150
55 to +150
V
V
V
A
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15590EJ3V0DS00 (3rd edition)
Date Published July 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
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  NEC Electronic Components Datasheet  

A1841 Datasheet

PNP SILICON EPITAXIAL TRANSISTOR

No Preview Available !

2SA1841
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain Note
ICBO VCB = 100 V, IE = 0 A
IEBO VEB = 5.0 V, IC = 0 A
hFE1 VCE = 2.0 V, IC = 4.0 A
Collector Saturation Voltage Note
Base Saturation Voltage Note
hFE2
VCE(sat)
VBE(sat)
VCE = 2.0 V, IC = 8.0 A
IC = 4.0 A, IB = 4.0 mA
IC = 4.0 A, IB = 4.0 mA
Turn-on Time
ton IC = 4.0 A
Storage Time
tstg IB1 = IB2 = 4.0 mA
Fall Time
tf RL = 12.5 , VCC = 50 V
Note Pulsed test PW 350 ms, Duty Cycle 2%
hFE CLASSIFICATION
Marking
hFE1
L
4000 to 10000
K
8000 to 20000
MIN.
4000
500
TYP.
MAX.
1.0
5.0
20000
UNIT
µA
mA
1.5 V
2.0 V
0.2 µs
1.5 µs
0.7 µs
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
VIN
PW
PW =. . 50 µs
Duty Cycle 2%
RL
IC
IB1
T.U.T.
IB2
VBB .=. 5 V
Base current
waveform
VCC
Collector current
waveform
10%
90%
IB2
IB1
IC
ton tstg tf
2 Data Sheet D15590EJ3V0DS
Free Datasheet http://www.datasheet-pdf.com/


Part Number A1841
Description PNP SILICON EPITAXIAL TRANSISTOR
Maker NEC
Total Page 6 Pages
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