MOS FIELD EFFECT TRANSISTOR
N- AND P-CHANNEL POWER MOS FET
The µ PA2790GR is N- and P-channel MOS Field Effect
Transistors designed for Motor Drive application.
• Low on-state resistance
N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A)
RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A)
P-channel RDS(on)1 = 60 mΩ MAX. (VGS = −10 V, ID = −3 A)
RDS(on)2 = 80 mΩ MAX. (VGS = −4.5 V, ID = −3 A)
• Low input capacitance
N-channel Ciss = 500 pF TYP.
P-channel Ciss = 460 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
N-channel 1 : Source 1
2 : Gate 1
7, 8 : Drain 1
P-channel 3 : Source 2
4 : Gate 2
5, 6 : Drain 2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16954EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
Free Datasheet http://www.datasheet4u.com/