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  NEC Electronic Components Datasheet  

A2790GR Datasheet

UPA2790GR

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2790GR
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2790GR is N- and P-channel MOS Field Effect
Transistors designed for Motor Drive application.
FEATURES
Low on-state resistance
N-channel RDS(on)1 = 28 mMAX. (VGS = 10 V, ID = 3 A)
RDS(on)2 = 40 mMAX. (VGS = 4.5 V, ID = 3 A)
P-channel RDS(on)1 = 60 mMAX. (VGS = 10 V, ID = 3 A)
RDS(on)2 = 80 mMAX. (VGS = 4.5 V, ID = 3 A)
Low input capacitance
N-channel Ciss = 500 pF TYP.
P-channel Ciss = 460 pF TYP.
Built-in gate protection diode
Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
85
14
5.37 Max.
N-channel 1 : Source 1
2 : Gate 1
7, 8 : Drain 1
P-channel 3 : Source 2
4 : Gate 2
5, 6 : Drain 2
6.0 ±0.3
4.0
1.0
1.27 0.6
0.40
+0.11
–0.05
0.12 M
0.5 ±0.2
EQUIVALENT CIRCUITS
0.10
N-channel
P-channel
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA2790GR
Power SOP8
Gate
Drain
Body
Diode
Gate
Protection
Diode
Source
Gate
Drain
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16954EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004
Free Datasheet http://www.datasheet4u.com/


  NEC Electronic Components Datasheet  

A2790GR Datasheet

UPA2790GR

No Preview Available !

µ PA2790GR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain to Source Voltage (VGS = 0 V)
VDSS
30
30
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (1 unit) Note2
Total Power Dissipation (2 units) Note2
VGSS
ID(DC)
ID(pulse)
PT
PT
±20 m20
±6 m6
±24 m24
1.7
2.0
Channel Temperature
Tch
150
Storage Temperature
Tstg 55 to +150
Single Avalanche Current Note3
IAS
6
6
Single Avalanche Energy Note3
EAS 3.6
3.6
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
3. Starting Tch = 25°C, VDD = 1 x VDSS, RG = 25 , L = 100 µH, VGS = VGSS 0 V
2
UNIT
V
V
A
A
W
W
°C
°C
A
mJ
2 Data Sheet G16954EJ2V0DS
Free Datasheet http://www.datasheet4u.com/


Part Number A2790GR
Description UPA2790GR
Maker NEC
Total Page 11 Pages
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