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AP1F3P Datasheet

(AP1 Series) on-chip resistor NPN silicon epitaxial transistor

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DATA SHEET
COMPOUND TRANSISTOR
AP1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• Current drive available up to 0.7 A
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
AP1 SERIES LISTS
Products
AP1A4A
AP1L2Q
AP1A3M
AP1F3P
AP1J3P
AP1L3N
AP1A4M
R1 (K)
0.47
1.0
2.2
3.3
4.7
10
R2 (K)
10
4.7
1.0
10
10
10
10
Electrode Connection
1. Emitter EIAJ : SC-43B
2. Collector JEDEC: TO-92
3. Base IEC : PA33
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (Pulse)
IC(pulse) *
Base current (DC)
IB(DC)
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50 %
Ratings
25
25
10
0.7
1.0
0.02
750
150
55 to +150
Unit
V
V
V
A
A
A
mW
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16171EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
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  NEC Electronic Components Datasheet  

AP1F3P Datasheet

(AP1 Series) on-chip resistor NPN silicon epitaxial transistor

No Preview Available !

AP1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Collector saturation voltage VCE(sat) **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW 350 µs, duty cycle 2 %
Conditions
VCB = 22 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
IC = 0.3 A, IC = 6 A
VCE = 5.0 V, IC = 100 µA
AP1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW 350 µs, duty cycle 2 %
Conditions
VCB = 22 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
VIN = 5.0 V, IC = 0.3 A
VCE = 5.0 V, IC = 100 µA
AP1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW 350 µs, duty cycle 2 %
Conditions
VCB = 22 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
VIN = 5.0 V, IC = 0.2 A
VCE = 5.0 V, IC = 100 µA
AP1 SERIES
MIN.
200
100
50
7
TYP.
0.28
10
MAX.
100
0.4
0.3
13
Unit
nA
V
V
k
MIN.
150
100
50
329
3.39
TYP.
350
300
200
0.3
0.65
470
4.7
MAX.
100
0.4
0.3
611
6.11
Unit
nA
V
V
k
MIN.
80
100
50
0.7
0.7
TYP.
MAX.
100
0.3
1.0
1.0
0.4
0.3
1.3
1.3
Unit
nA
V
V
k
k
2 Data Sheet D16171EJ1V0DS
Free Datasheet http://www.datasheet4u.com/


Part Number AP1F3P
Description (AP1 Series) on-chip resistor NPN silicon epitaxial transistor
Maker NEC
Total Page 6 Pages
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