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  NEC Electronic Components Datasheet  

AQ1 Datasheet

on-chip resistor NPN silicon epitaxial transistor

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DATA SHEET
COMPOUND TRANSISTOR
AQ1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• High current drives such as IC and motor solenoid available up
to 2 A
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
AQ1 SERIES LISTS
Products
AQ1L2N
AQ1A3M
AQ1F3M
AQ1F3P
AQ1L2Q
AQ1F2Q
AQ1A4A
R1 (K)
0.47
1.0
2.2
2.2
0.47
0.22
R2 (K)
1.0
1.0
2.2
10
4.7
2.2
10
Electrode Connection
1. Emitter EIAJ : SC-43B
2. Collector JEDEC: TO-92
3. Base IEC : PA33
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
2.0
A
Collector current (Pulse)
IC(pulse) *
3.0
A
Base current (DC)
IB(DC)
0.04
A
Total power dissipation
PT
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150
°C
* PW 10 ms, duty cycle 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10840EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


  NEC Electronic Components Datasheet  

AQ1 Datasheet

on-chip resistor NPN silicon epitaxial transistor

No Preview Available !

$4/1
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VCE(sat) **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3:  µV GXW\ F\FOH 
Conditions
VCB = 20 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 1.0 A
VCE = 2.0 V, IC = 2.0 A
IC = 5.0 A, IC = 0.7 A
VCE = 5.0 V, IC = 100 µA
$4$0
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3:  µV GXW\ F\FOH 
Conditions
VCB = 20 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 1.0 A
VCE = 2.0 V, IC = 2.0 A
IC = 5.0 A, IC = 0.5 A
VCE = 5.0 V, IC = 100 µA
$4)0
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3:  µV GXW\ F\FOH 
Conditions
VCB = 20 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 1.0 A
VCE = 2.0 V, IC = 2.0 A
IC = 5.0 A, IC = 0.3 A
VCE = 5.0 V, IC = 100 µA
AQ1 SERIES
MIN.
50
150
50
329
0.7
TYP.
MAX.
100
0.55
0.3
470 611
1.0 1.3
Unit
nA
V
V
k
MIN.
50
150
50
0.7
0.7
TYP.
MAX.
100
0.4
0.3
1.0 1.3
1.0 1.3
Unit
nA
V
V
k
k
MIN.
80
150
50
1.54
1.54
TYP.
MAX.
100
0.3
0.3
2.2 2.86
2.2 2.86
Unit
nA
V
V
k
k
 'DWD 6KHHW '(-9'6


Part Number AQ1
Description on-chip resistor NPN silicon epitaxial transistor
Maker NEC
Total Page 6 Pages
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