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B984 - PNP SIlicon Transistor

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz.

Cu pad on a 0.06inch thick FR4 PCB.

Key Features

  • Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD18534Q5A www.ti.com SLPS389A – OCTOBER 2012 – REVISED JANUARY 2013 60-V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18534Q5A 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 60 17 3.5 VGS = 4.5V VGS = 10V 1.9 9.9 7.