2SC4551
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector to emitter voltage
VCEO(SUS)
VCEX(SUS)
IC = 6.0 A, IB = 0.6 A, L = 1 mH
IC = 6.0 A, IB1 = −IB2 = 0.6 A,
VBE(OFF) = −1.5 V, L = 180 µH, clamped
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
ICBO
ICER
ICEX1
ICEX2
VCB = 60 V, IE = 0
VCE = 60 V, RBE = 50 Ω, Ta = 125°C
VCE = 60 V, VBE(OFF) = −1.5 V
VCE = 60 V, VBE(OFF) = −1.5 V,
Ta = 125°C
www.DataSheet4UE.mcoitmter cutoff current
DC current gain
IEBO
hFE1*
VEB = 5.0 V, IC = 0
VCE = 2.0 V, IC = 1.0 A
DC current gain
hFE2* VCE = 2.0 V, IC = 2.0 A
DC current gain
hFE3* VCE = 2.0 V, IC = 6.0 A
Collector saturation voltage VCE(sat)1* IC = 6.0 A, IB = 0.3 A
Collector saturation voltage VCE(sat)2* IC = 8.0 A, IB = 0.4 A
Base saturation voltage
VBE(sat)1* IC = 6.0 A, IB = 0.3 A
Base saturation voltage
VBE(sat)2* IC = 8.0 A, IB = 0.4 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IC = 1.0 A
Turn-on time
Storage time
Fall time
ton IC = 6.0 A, RL = 8.3 Ω,
tstg IB1 = −IB2 = 0.3 A, VCC ≅ 50 V
Refer to the test circuit.
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
MIN.
60
60
TYP.
MAX.
Unit
V
V
10 µA
1.0 mA
10 µA
1.0 mA
10 µA
100
100 200 400
60
0.3 V
0.5 V
1.2 V
1.5 V
150 pF
140 MHz
0.3 µs
1.5 µs
0.3 µs
Base current
waveform
Collector current
waveform
2 Data Sheet D15597EJ2V0DS
