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  NEC Electronic Components Datasheet  

C4554 Datasheet

2SC4554

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DATA SHEET
SILICON POWER TRANSISTOR
2SC4554
NPN SILICON EPITAXIAL TRANSISTOR
FOR SWITCHING
The 2SC4554 is a power transistor designed especially for low
collector saturation voltage and features large current switching at a
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low power dissipation.
In addition, a high hFE enables alleviation of the driver load.
FEATURES
• High hFE and low VCE(sat):
hFE 800 (VCE = 2 V, IC = 5 A)
VCE(sat) 0.12 V (IC = 5 A, IB = 0.05 A)
• On-chip C to E damper diode
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
Total power dissipation
IB(DC)
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50%
Ratings
100
100
7.0
±15
±22
4.0
35
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
EQUIVALENT CIRCUIT
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15600EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


  NEC Electronic Components Datasheet  

C4554 Datasheet

2SC4554

No Preview Available !

2SC4554
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Collector saturation voltage
Collector saturation voltage
www.DataSheet4UB.acsoemsaturation voltage
Gain bandwidth product
Collector capacitance
Turn-on time
Storage time
Fall time
Diode forward voltage
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)1
VCE(sat)2
VCE(sat)3
VCE(sat)4
VBE(sat)
fT
Cob
ton
tstg
tf
VDF
Conditions
VCB = 100 V, IE = 0
VEB = 5.0 V, IC = 0
VCE = 2.0 V, IC = 5.0 A
VCE = 2.0 V, IC = 10 A
IC = 5.0 A, IB = 100 mA
IC = 5.0 A, IB = 50 mA
IC = 10 A, IB = 200 mA
IC = 10 A, IB = 100 mA
IC = 10 A, IB = 100 mA
VCE = 5.0 V, IC = 1.0 A
VCB = 10 V, IE = 0, f = 1 MHz
IC = 8.0 A, RL = 2.0 ,
IB1 = IB2 = 80 mA, VCC 16 V
Refer to the test circuit.
IDF = 10 A
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
MIN.
450
150
TYP.
800
0.12
100
210
0.5
2.0
0.5
1.6
MAX.
10
17
2,000
0.25
0.3
0.4
0.75
1.2
Unit
µA
mA
V
V
V
V
V
MHz
pF
µs
µs
µs
V
Base current
waveform
Collector current
waveform
2 Data Sheet D15600EJ2V0DS


Part Number C4554
Description 2SC4554
Maker NEC
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C4554 Datasheet PDF






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