• Part: C945P
  • Description: NPN SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 294.09 KB
Download C945P Datasheet PDF
NEC
C945P
C945P is NPN SILICON TRANSISTOR manufactured by NEC.
- Part of the C945 comparator family.
DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching. FEATURES - High voltage LVCEO = 50 V MIN. - Excellent h FE linearity h FE1 = (0.1 m A)/h FE2 (1.0 m A) = 0.92 TYP. PACKAGE DRAWING (Unit: mm) φ 5.2 MAX. 5.5 MAX. 12.7 MIN. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipation (TA = 25°C) - 55 to +150°C +150°C Maximum Total Power Dissipation Maximum Voltages and Currents (TA = 25°C) 250 m W VCBO Collector to Base Voltage 60 V VCEO VEBO IC Collector to Emitter Voltage Emitter to Base Voltage Collector Current 50 V 5.0 V 100 m A Base Current 20 m A 1.27 2.54 1.77 MAX. 4.2 MAX. 1. Emitter 2. Collector 3. Base EIAJ: JEDEC: IEC: SC43B TO92 PA33 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC DC Current Gain DC Current Gain Gain Bandwidth Product Collector to Base Capacitance Collector Cutoff Current Emitter Cutoff Current Base to Emitter Voltage Collector Saturation Voltage Base Saturation Voltage SYMBOL h FE1 h FE2 f T Cob ICBO IEBO VBE VCE(sat) VBE(sat) TEST CONDITIONS VCE = 6.0 V, IC = 0.1 m A VCE = 6.0 V, IC = 1.0 m A VCE = 6.0 V, IE = - 10 m A VCB = 6.0 V, IE = 0, f = 1.0 MHz VCB = 60 V, IE = 0 A VEB = 5.0 V, IC = 0 A VCE = 6.0 V, IC = 1.0 m A IC = 100 m A, IB = 10 m A IC = 100 m A, IB = 10 m A MIN. 50 90 TYP. 185 200 250 3.0 0.62 0.15...