D2161 Datasheet - NEC

2SD2161

D2161 Features

* High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 2.0 A)

* Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base vol

D2161 General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.

D2161 Datasheet (158.55 KB)

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D2161

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NEC

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158.55 KB

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2sd2161.
DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM.

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D2161 2SD2161 NEC

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D2161 Features

D2161 General Description

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