* Low On-Resistance RDS(on) = 0.8 Ω MAX. (@ VGS =
  –10 V, ID =
  –3.0 A) 15.0 ±0.3 12.0 ±0.2 13.5 MIN.
* Low Ciss Ciss = 1040 pF TY.

PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2 FEATURES
* Low On-Resistance RDS(on) = 0.

The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2 FEATURES
* Low On-Resistance RDS(on) = 0.8 Ω MAX. (@ VGS =
 .

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