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J649 Key Features

  • Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = -10 V, ID = -10 A) RDS(on)2 = 75 mΩ MAX. (VGS = -4.0 V, ID = -10 A
  • Low input capacitance: Ciss = 1900 pF TYP. (VDS = -10 V, VGS = 0 V)
  • Built-in gate protection diode (Isolated TO-220)

J649 Description

The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ649 PACKAGE Isolated TO-220.