* Directly driven by ICs having a 3 V power supply.
* Has low Gate Leakage Current IGSS = ±5 nA MAX. (VGS = ±3.0 V) G 0.9 ±0.1 Drain to Source Voltage (VGS = 0.

of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of ea.

The 2SK1658 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable for appliances including Filter Circuit. 2.0 ±0.2 0.3 +0.1
  –0 0.65 0.65 2.1 ±0.1 .

K1601

K1601T

K1601TE

K1602

K1602SE

K1602T

K1602TE

K1603

K1603T

K1603TE

K1606

K161

K1610