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K2111 Datasheet - NEC

2SK2111

K2111 Features

* Low ON resistance RDS(on) = 0.6 Ω MAX. @VGS = 4.0 V, ID = 0.5 A

* High switching speed ton + toff < 100 ns

* Low parasitic capacitance PACKAGE DIMENSIONS (in mm) 4.5 ± 0.1 1.6 ± 0.2 1.5 ± 0.1 0.8 MIN. 2.5 ± 0.1 4.0 ± 0.25 SDG 0.42 ±0.06 1.5 0.42 0.47 ±0.06 ±0.06 3.0

K2111 Datasheet (54.98 KB)

Preview of K2111 PDF

Datasheet Details

Part number:

K2111

Manufacturer:

NEC

File Size:

54.98 KB

Description:

2sk2111.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and i.

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TAGS

K2111 2SK2111 NEC

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