The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2111
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.
This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters.
FEATURES • Low ON resistance
RDS(on) = 0.6 Ω MAX. @VGS = 4.0 V, ID = 0.5 A • High switching speed
ton + toff < 100 ns • Low parasitic capacitance
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1 1.6 ± 0.2
1.5 ± 0.1
0.8 MIN. 2.5 ± 0.1
4.0 ± 0.25
SDG
0.42 ±0.06 1.5
0.42 0.47 ±0.06 ±0.06
3.0
0.41+–00..
K2111 Datasheet
