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K2461 - 2SK2461

General Description

signed for high speed switching applications.

Key Features

  • Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A).
  • Low Ciss Ciss = 1400 pF TYP.
  • Built-in G-S Gate Protection Diodes.
  • High Avalanche Capability Ratings 15.0 ±0.3 3 ±0.1 12.0 ±0.2.

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Full PDF Text Transcription for K2461 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2461. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor de- signe...

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RIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor de- signed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A) • Low Ciss Ciss = 1400 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings 15.0 ±0.3 3 ±0.1 12.0 ±0.2 PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 13.5MIN. 4 ±0.

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