2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source 1 2 3 MP-45F (ISOLATED TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain.

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.

This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. www.DataSheet4U.com 15.0 ± 0.3 3 ± 0.1 4 ± 0.2
* Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (V.

K2725

K2726

K2728

K270

K2700

K2708

K2711

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K2733

K2737