Datasheet Summary
DATA SHEET
MOS Field Effect Power Transistors
2SK2723
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DIMENSIONS (in millimeter)
10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. ..
15.0 ± 0.3
3 ± 0.1 4 ± 0.2
- Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ.
- Low Ciss
- Built-in G-S Protection Diode
- Isolated TO-220 Package
0.7 ± 0.1 2.54
1.3 ± 0.2 1.5 ± 0.2 2.54
13.5MIN.
12.0 ± 0.2
Features
2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source
1 2 3
MP-45F (ISOLATED...