K2826 Description
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
K2826 Key Features
- Super Low On-State Resistance
- Low Ciss : Ciss = 7200 pF (TYP.)
- Built-in Gate Protection Diode
K2826 is 2SK2826 manufactured by NEC.
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.