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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
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2SK3326
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3326 PACKAGE Isolated TO-220
DESCRIPTION
The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low gate charge : QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.