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  NEC Electronic Components Datasheet  

K3385 Datasheet

2SK3385

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3385
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3385 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3385
PACKAGE
TO-251
FEATURES
Low On-state Resistance
5 RDS(on)1 = 28 mMAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 45 mMAX. (VGS = 4.0 V, ID = 15 A)
Low Ciss : Ciss = 1500 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
2SK3385-Z
TO-252
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
5 Drain Current (Pulse) Note1
5 Total Power Dissipation (TC = 25°C)
ID(DC)
ID(pulse)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
5 Single Avalanche Current Note2
5 Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
±30
±100
36
1.0
150
–55 to +150
22
48
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V
THERMAL RESISTANCE
5 Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
3.47 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14472EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999,2000


  NEC Electronic Components Datasheet  

K3385 Datasheet

2SK3385

No Preview Available !

2SK3385
5 ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 15 A
RDS(on)2 VGS = 4.0 V, ID = 15 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 15 A
Drain Leakage Current
IDSS VDS = 60 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
ID = 15 A
Rise Time
tr VGS(on) = 10 V
Turn-off Delay Time
td(off)
VDD = 30 V
Fall Time
tf RG = 10
Total Gate Charge
QG ID = 30 A
Gate to Source Charge
QGS
VDD = 48 V
Gate to Drain Charge
QGD
VGS(on) = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr IF = 30 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
22 28 m
31 45 m
1.5 2.0 2.5 V
8 16
S
10 µA
±10 µA
1500
pF
250 pF
130 pF
22 ns
250 ns
77 ns
77 ns
30 nC
4.8 nC
8.6 nC
1.0 V
44 ns
79 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL VGS
VGS
Wave Form
010 %
VGS(on) 90 %
VDD
ID 90 %
ID 0 10 %
Wave Form
ID
90 %
10 %
td(on) tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14472EJ1V0DS00


Part Number K3385
Description 2SK3385
Maker NEC
Total Page 4 Pages
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