K3638 - 2SK3638

NEC (now Renesas Electronics)

General Description

The 2SK3638 is N-channel MOS FET device that

Key Features

a low on-state resistance and excellent switching characteristics, and designed for low voltage high current.

📥 Download Datasheet

K3638 2sk3638 by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	K3638
Manufacturer	NEC (now Renesas Electronics)
File Size	175.75 KB
Description	2SK3638
Datasheet	K3638 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
K363	N-Channel MOSFET	Toshiba
K3630	Photocoupler	KODENSHI KOREA CORP
K3631	Photocoupler	KODENSHI KOREA CORP
K3637	2SK3637	Panasonic Semiconductor
K360	Silicon Zener Diodes	Aeroflex

Other Datasheets by NEC (now Renesas Electronics)

Part Number	Description
K3639	2SK3639
K3642	2SK3642
K3659	2SK3659

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3638-ZK PACKAGE TO-252 (MP-3ZK) FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ciss: Ciss = 1100 pF TYP.