Datasheet Summary
DATA SHEET
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MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that Features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3659 PACKAGE Isolated TO-220
Features
- 4.5V drive available.
- Low on-state resistance, RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)
- Low gate charge, QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A)
- Built-in gate protection diode.
- Avalanche capability ratings.
- Isolated TO-220...