MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The 2SK3918 is N-channel MOS FET device that
www.DataSheet4U.cfoematures a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
• Low on-state resistance
RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low Ciss: Ciss = 1300 pF TYP.
• 5 V drive available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17077EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.