K4075 - MOS FIELD EFFECT TRANSISTOR
K4075 Features
* Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
* Low Ciss: Ciss = 2900 pF TYP.
* Logic level drive type ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Sourc
