
	NEC Electronic Components Datasheet

K4075 Datasheet

MOS FIELD EFFECT TRANSISTOR

No Preview Available !

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK4075

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK4075 is N-channel MOS FET designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

2SK4075-ZK-E1-AY

Pure Sn (Tin)

2SK4075-ZK-E2-AY

PACKING

Tape

2500 p/reel

PACKAGE

TO-252 (MP-3ZK)

typ. 0.27 g

FEATURES

• Low on-state resistance

RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A)

RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A)

• Low Ciss: Ciss = 2900 pF TYP.

• Logic level drive type

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 40 V

Gate to Source Voltage (VDS = 0 V)

VGSS ±20 V

Drain Current (DC) (TC = 25°C)

Drain Current (pulse) Note1

ID(DC)

ID(pulse)

±60

±180

Total Power Dissipation (TC = 25°C) PT1 52 W

Total Power Dissipation (TA = 25°C) PT2 1.0 W

Channel Temperature

Tch 150 °C

Storage Temperature

Single Avalanche Current Note2

Single Avalanche Energy Note2

Tstg –55 to +150 °C

IAS 28 A

EAS 78 mJ

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Rth(ch-C) 2.4 °C/W

Channel to Ambient Thermal Resistance

Rth(ch-A)

125

°C/W

(TO-252)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18223EJ2V0DS00 (2nd edition)

Date Published September 2006 NS CP(K)

Printed in Japan

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

2006


	NEC Electronic Components Datasheet

K4075 Datasheet

MOS FIELD EFFECT TRANSISTOR

No Preview Available !

2SK4075

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS VDS = 40 V, VGS = 0 V

Gate Leakage Current

IGSS VGS = ±20 V, VDS = 0 V

<R>

Gate Cut-off Voltage

Forward Transfer Admittance Note

Drain to Source On-state Resistance Note

VGS(off)

| yfs |

RDS(on)1

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 15 A

VGS = 10 V, ID = 30 A

RDS(on)2 VGS = 4.5 V, ID = 15 A

Input Capacitance

Ciss VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 20 V

Rise Time

tr ID = 30 A

Turn-off Delay Time

td(off)

VGS = 10 V

Fall Time

tf RG = 0 Ω

Total Gate Charge

QG VDD = 32 V

Gate to Source Charge

QGS

VGS = 10 V

Gate to Drain Charge

Body Diode Forward Voltage Note

QGD

VF(S-D)

ID = 60 A

IF = 60 A, VGS = 0 V

Reverse Recovery Time

trr IF = 60 A, VGS = 0 V

Reverse Recovery Charge

Note Pulsed

Qrr di/dt = 100 A/μs

MIN. TYP. MAX. UNIT

1 μA

±100 nA

1.5 2.0 2.5

9.3 S

5.2 6.7 mΩ

7.2 10 mΩ

2900

450 pF

293 pF

18 ns

16 ns

54 ns

9 ns

54 nC

11 nC

15 nC

0.9 1.5

33 ns

33 nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

RG = 25 Ω

PG.

VGS = 20 → 0 V

50 Ω

VDD

BVDSS

VDD

IAS

VDS

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

VGS

τ = 1 μs

Duty Cycle ≤ 1%

VDD

VGS

Wave Form

10%

VDS

90%

VDS

Wave Form

td(on)

VGS 90%

90%

10% 10%

tr td(off) tf

ton toff

D.U.T.

IG = 2 mA

PG. 50 Ω

VDD

2 Data Sheet D18223EJ2V0DS

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf

K4075 Datasheet

MOS FIELD EFFECT TRANSISTOR

K4075 Datasheet

MOS FIELD EFFECT TRANSISTOR

Similar Datasheet

Part Number Start With