MC-4516CB64ES Datasheet | NEC

DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB64ES, 4516CB64PS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-4516CB64ES and MC-4516CB64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: µPD45128841 are assembled. These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features - 16,777,216 words by 64 bits organization - Clock frequency and access time from CLK Part number MC-4516CB64ES-A10B /CAS Latency CL = 3 CL = 2 Clock frequency (MAX.) 100 MHz 67 MHz 100 MHz 67 MHz Access time from CLK (MAX.) 7 ns 8 ns 7 ns 8 ns MC-4516CB64PS-A10B CL = 3 CL = 2 - Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge - Pulsed interface - Possible to assert random column address in every cycle - Quad internal banks controlled by BA0 and BA1 (Bank Select) - Programmable burst-length (1, 2, 4, 8 and Full Page) - Programmable wrap sequence (Sequential / Interleave) - Programmable /CAS latency (2, 3) - Automatic precharge and controlled precharge - CBR (Auto) refresh and self refresh - Single +3.3 V ± 0.3 V power supply - LVTTL patible - 4,096 refresh cycles/64 ms - Burst termination by Burst Stop mand and Precharge mand - 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm) - Unbuffered type - Serial PD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional...