MC-4R64CEE6C Datasheet PDF (Direct Rambus DRAM RIMM Module)

MC-4R64CEE6C - Direct Rambus DRAM RIMM Module

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

Features

184 edge connector pads with 1mm pad spacing.
64 MB Direct RDRAM storage.
Each RDRAM® has 32 banks, for 128 banks total on module.
Gold plated contacts.
RDRAMs use Chip Scale Package (CSP).
Serial Presence Detect support.
Operates from a 2.5 V supply.
Low power and powerdown self refresh modes.
Separate Row and Column buses for higher efficiency The information in this document is subject to change without notice.

Datasheet Details

Part number	MC-4R64CEE6C
Manufacturer	NEC
File Size	126.33 KB
Description	Direct Rambus DRAM RIMM Module
Datasheet	MC-4R64CEE6C Datasheet
Additional preview pages of the MC-4R64CEE6C datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R64CEE6B, 4R64CEE6C Direct RambusTM DRAM RIMMTM Module 64M-BYTE (32M-WORD x 16-BIT) Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. MC-4R64CEE6B, 4R64CEE6C modules consists of four 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

Published: Apr 26, 2005 |