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MC-4R96CEE6C - Direct Rambus DRAM RIMM Module

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

Features

  • 184 edge connector pads with 1mm pad spacing.
  • 96 MB Direct RDRAM storage.
  • Each RDRAM® has 32 banks, for 192 banks total on module.
  • Gold plated contacts.
  • RDRAMs use Chip Scale Package (CSP).
  • Serial Presence Detect support.
  • Operates from a 2.5 V supply.
  • Low power and powerdown self refresh modes.
  • Separate Row and Column buses for higher efficiency The information in this document is subject to change without notice.

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Datasheet Details

Part number MC-4R96CEE6C
Manufacturer NEC
File Size 127.77 KB
Description Direct Rambus DRAM RIMM Module
Datasheet download datasheet MC-4R96CEE6C Datasheet

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MC-4R96CEE6B Direct Rambus DRAM RIMM Module
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MC-4R128CEE6C Direct Rambus DRAM RIMM Module
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R96CEE6B, 4R96CEE6C Direct RambusTM DRAM RIMMTM Module 96M-BYTE (48M-WORD x 16-BIT) Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. MC-4R96CEE6B, 4R96CEE6C modules consists of six 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.
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