NDL5506P Datasheet - NEC

NDL5506P InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE

NDL5506P Features

* High quantum efficiency η = 85 % @ λ = 1 300 nm η = 80 % @ λ = 1 550 nm

* Small dark current ID = 2 nA

* High-speed response fC = 1.2 GHz @ M = 20

* Internal thermoelectric cooler

* Hermetically sealed 14-pin Dual In-line Package 25.4inued 12.5 1.0

Datasheet Details

NDL5506P

NEC

100.94 KB

Ingaas avalanche photo diode 14-pin dip module.

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