NE5510279A - 4.8V OPERATION SILICON RF POWER LDMOS FET

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NEC

NE5510279A 4.8V OPERATION SILICON RF POWER LDMOS FET by NEC - Datasheet Preview — Datasheet preview – NE5510279A

Datasheet Details

Part number	NE5510279A
Manufacturer	NEC
File Size	55.85 KB
Description	4.8V OPERATION SILICON RF POWER LDMOS FET
Datasheet	NE5510279A Datasheet
Additional preview pages of the NE5510279A datasheet.

Product details

Description

The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets.Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate laterally diffused MOS FET) and housed in a surface mount package.The device can deliver 33.0 dBm output power with 47% power added efficiency at 1.8 GHz under the 4.8 V supply voltage.

Features

High output power : Pout = 35.5 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : Pout = 33.0 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm).
High power added efficiency : ηadd = 65% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : ηadd = 47% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm).
High linear gain : GL = 16.0 dB TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 10 dBm) : GL = 10.0.

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Published: Jul 9, 2007 |