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  NEC Electronic Components Datasheet  

NE5510279A Datasheet

3.5V OPERATION SILICON RF POWER MOSFET

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3.5 V OPERATION SILICON RF
POWER MOSFET FOR GSM1800 NE5510279A
TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER:
32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, PIN = 25 dBm
• HIGH POWER ADDED EFFICIENCY:
45% TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, PIN = 25 dBm
• HIGH LINEAR GAIN:
10 dB TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, PIN = 10 dBm
• SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:
2.8 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
Gate
PACKAGE OUTLINE 79A
4.2 Max
Source
Drain
Gate
1.5 ± 0.2
Source
Drain
0.4 ± 0.15
5.7 Max
0.8 Max
3.6 ± 0.2
Bottom View
DESCRIPTION
The NE5510279A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
3.5 V GSM1800 handsets. Dies are manufactured using NEC's
NEWMOS technology (NEC's 0.6 µm WSi gate lateral
MOSFET) and housed in a surface mount package. This de-
vice can deliver 32 dBm output power with 45% power added
efficiency at 1.8 GHz under the 3.5 V supply voltage, or can
deliver 31 dBm output power at 2.8 V by varying the gate
voltage as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES
• OTHERS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
UNITS MIN
IGSS Gate to Source Leakage Current
nA -
IDSS Drain to Source Leakage Current nA -
VTH Gate Threshold Voltage
V 1.0
gm Transconductance
S-
RDS(ON) Drain to Source On Resistance
--
BVDSS
Drain to Source Breakdown Voltage
V
20
TYP
-
-
1.35
1.50
0.27
24
MAX
100
100
2.0
-
-
-
NE5510279A
79A
TEST CONDITIONS
VGSS = 6.0 V
VDSS = 8.5 V
VDS = 4.8 V, IDS = 1 mA
VDS = 4.8 V, IDS1 = 500 mA, IDS2 = 700 mA
VGS = 6.0 V, VDS = 0.5 V
IDSS = 10 A
California Eastern Laboratories


  NEC Electronic Components Datasheet  

NE5510279A Datasheet

3.5V OPERATION SILICON RF POWER MOSFET

No Preview Available !

NE5510279A
PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C)
SYMBOLS
CHARACTERISTICS
UNITS MIN TYP MAX
TEST CONDITIONS
GL Linear Gain
dB — 10.0 —
f = 1.8 GHz, PIN = 10 dBm,
VDS = 3.5 V,IDQ = 400 mA
POUT(1) Output Power
dBm
31.0
32.0
f = 1.8 GHz, PIN = 25 dBm,
IOP(1)
ηADD(1)
Operating Current
Power Added Efficiency
mA — 810 —
% 37 45
VDS = 3.5 V,IDQ = 400 mA
POUT(2) Maximum Output Power
dBm
32.6
f = 1.8 GHz, PIN = 25 dBm
IOP(2)
Operating Current
mA — 1,000 —
VDS = 3.5 V,VGS = 2.5 V
POUT(3) Output Power at Lower Voltage
dBm
31.1
f = 1.8 GHz, PIN = 25 dBm
IOP(3)
Operating Current
mA — 880 —
VDS = 2.8 V,VGS = 2.5 V
GL Linear Gain
dB — 10.0 —
f = 1.8 GHz, PIN = 10 dBm,
VDS = 4.8 V,IDQ = 400 mA
POUT
Output Power
dBm
35.0
f = 1.8 GHz, PIN = 28 dBm,
IOP
ηADD
Operating Current
Power Added Efficiency
mA — 1,120 —
% — 48 —
VDS = 4.8 V,IDQ = 400 mA
GL Linear Gain
dB 35.0 35.0 35.0
f = 1.8 GHz, PIN = 10 dBm,
VDS =6.0 V,IDQ = 400 mA
POUT
Output Power
dBm
37.0
f = 1.8 GHz, PIN = 30 dBm,
IOP
ηADD
Operating Current
Power Added Efficiency
mA
%
1,400
49
VDS =6.0 V,IDQ = 400 mA
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS Drain Supply Voltage
V 8.5
VGS Gate Supply Voltage
V6
ID Drain Current
A
ID
Drain Current (Pulse Test)2
A
PIN Input Power3
dBm
1.0
2.0
30
PT Total Power Dissipation W 2.4
TCH
TSTG
Channel Temperature
Storage Temperature
°C 125
°C -55 to +125
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, ton = 1 ms.
3. Frequency = 1.8 GHz, VDS = 3.5 V.
ORDERING INFORMATION
PART NUMBER
QTY
NE5510279A-T1
1 Kpcs/Reel
Note:
Embossed tape 12 mm wide. Gate pin faces perforation side of the
tape.
RECOMMENDED OPERATING CONDITIONS
SYMBOLS
VDS
VGS
ID
PIN
f
TOP
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current (Pulse Test)
Input Power
Operating Frequency Range
Operating Temperature
TEST CONDITIONS
Duty Cycle 50%, Ton1ms
Frequency = 1.8 GHz, VDS = 3.5 V
UNITS
V
V
A
dBm
GHz
˚C
MIN
2.8
0
24
1.6
-30
TYP MAX
3.5 6.0
2.0 2.5
— 1.5
25 26
— 2.0
25 85


Part Number NE5510279A
Description 3.5V OPERATION SILICON RF POWER MOSFET
Maker NEC
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