* HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm
* HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.

* DIGITAL CELLULAR PHONES
* OTHERS ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS.

The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µ m WSi gate lateral MOSFET) and housed in a surface.

NE5510179A

NE5511279A

NE5512

NE5512D

NE5512N

NE5514

NE5514D

NE5514N

NE5517

NE5517A

NE5500179A

NE5520

NE5520279A