NE5510279A Datasheet - NEC

3.5V OPERATION SILICON RF POWER MOSFET

NE5510279A Features

* HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm

* HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm

* HIGH LINEAR GAIN: 10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm

NE5510279A General Description

The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µ m WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 32 dBm out.

NE5510279A Datasheet (45.29 KB)

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Datasheet Details

Part number:

NE5510279A

Manufacturer:

NEC

File Size:

45.29 KB

Description:

3.5v operation silicon rf power mosfet.

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NE5510279A 3.5V OPERATION SILICON POWER MOSFET NEC

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NE5510279A Features

NE5510279A General Description

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