NE5510279A Key Features
- High output power
- High power added efficiency : ηadd = 65% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm)
- High linear gain
- Surface mount package
- Single supply
- Part: NE5510279A
- Description: 4.8V OPERATION SILICON RF POWER LDMOS FET
- Manufacturer: NEC
- Size: 55.85 KB
Related NEC Datasheets
| Part Number | Description |
|---|---|
| NE5510179A | 3.5V OPERATION SILICON RF POWER MOSFET |
| NE5511279A | 7.5V OPERATION SILICON RF POWER LD-MOS FET |
| NE5500179A | OPERATION SILICON RF POWER MOSFET |
| NE5520279A | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |
| NE5520279A-T1 | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |