NE76038 Description
NE76038 is a high performance gallium arsenide metal semiconductor field effect transistor housed in a plastic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1 - 14 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity.
NE76038 Key Features
- LOW NOISE FIGURE: 1.8 dB typical at 12 GHz
- HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz
- LG = 0.3 µm, WG = 280 µm
- LOW COST PLASTIC PACKAGING
- TAPE & REEL PACKAGING OPTION AVAILABLE
- 14 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability,