NEM0899F01-30 Datasheet | NEC

High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 Features - HIGH OUTPUT POWER: 100 Watts - HIGH GAIN: Linear Gain = 12 d B - LOW INTERMODULATION DISTORTION - HIGH DYNAMIC RANGE - HIGH EFFICIENCY: ηD = 53% - INTERNALLY MATCHED FOR THE 470-860 MHz BAND - PUSH-PULL STRUCTURE DESCRIPTION The NEM0899F01-30 is a high power enhancement mode Silicon MOSFET. Its design employs a vertical geometry for high drain to source breakdown voltage, a 1.3 mm x 28.8 mm gate, a gold metallization system, and a plasma silicon nitride layer on the surface of the transistor for long life and reliable operation. The NEM0899F01-30 uses two chips in a pushpull configuration and internal input and output pro-matching circuitry to provide broadband impedance transformation in the 470-860 MHz band. OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE F01 45˚ G1 Terminal-1 (Terminal-3) 45˚ G2 φ3.3 ±0.3 11.4±0.3 Terminal-2 19.4±0.4 D1 D2 ±0.2 ±0.2 13.5±0.3 28.0±0.3 2.5±0.2 0.1 21.5±0.3 4.7...