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  NEC Electronic Components Datasheet  

NEM0899F01-30 Datasheet

N-Channel MOSFET

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High Power N-Channel Silicon
MOSFET For Broadcast / Transmitters NEM0899F01-30
FEATURES
• HIGH OUTPUT POWER: 100 Watts
• HIGH GAIN: Linear Gain = 12 dB
• LOW INTERMODULATION DISTORTION
• HIGH DYNAMIC RANGE
• HIGH EFFICIENCY: ηD = 53%
• INTERNALLY MATCHED FOR THE 470-860 MHz BAND
• PUSH-PULL STRUCTURE
DESCRIPTION
The NEM0899F01-30 is a high power enhancement mode
Silicon MOSFET. Its design employs a vertical geometry for
high drain to source breakdown voltage, a 1.3 mm x 28.8 mm
gate, a gold metallization system, and a plasma silicon nitride
layer on the surface of the transistor for long life and reliable
operation. The NEM0899F01-30 uses two chips in a push-
pull configuration and internal input and output pro-matching
circuitry to provide broadband impedance transformation in
the 470-860 MHz band.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE F01
45˚
G1
S
Terminal-1
(Terminal-3)
45˚
G2
φ3.3 ±0.3
11.4±0.3
Terminal-2
19.4±0.4
D1
D2
3.2
3.2
±0.2
±0.2
13.5±0.3
28.0±0.3
2.5±0.2
0.1
21.5±0.3
4.7
Max
1.5±0.2
ELECTRICAL PERFORMANCE CHARACTERISTICS (TA = 25 °C)
SYMBOLS
POUT
ηD
GL
IDSS
VGS(off)
IGSS
RTH
PART NUMBER
PACKAGE CODE
PARAMETERS
Output Power
Drain Efficiency
Linear Gain
Drain-Source Leakage Current
Gate to Source Cutoff Voltage
Gate-Source Leakage Current
Thermal Resistance
UNITS
W
%
dB
mA
V
µA
°C/W
NEM0899F01-30
F01
MIN
TYP
MAX
90
100
48
50
10
12
2.0
1
4
1
0.6
CONDITIONS
860 MHz; PIN = 40 dBm
IDQ = 150 mA x 2
VDD = 30 V; PIN = 30 dBm
VDS = 60 V; VGS = 0 V
VDS = 5 V, ID = 50 mA
VGS = 7 V
Channel to Case
California Eastern Laboratories


  NEC Electronic Components Datasheet  

NEM0899F01-30 Datasheet

N-Channel MOSFET

No Preview Available !

NEM0899F01-30
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
VDSS
VGSS
IDS
PD
TCH
TSTG
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
A
W
°C
°C
RATINGS
60
7
15
290
200
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
LARGE SIGNAL IMPEDANCES ( Side to Side)
Frequency (MHz)
470
650
750
860
ZSOURCE ()
1.5 + j0.6
2.2 - j2.3
2.5 - j3.6
3.8 - j6.6
ZLOAD ()
7.3 - j6.0
8.0 + j0.8
4.3 - j4.8
3.5 - j5.5
G1
D1
Z source
S
Z load
G2
D2
ZSOURCE = Impedance of the external input matching circuit as seen
from gate to gate.
ZLOAD = Impedance of the external output matching circuit as seen
from drain to drain.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
3rd Order INTERMODLATION DISTORTION
AND DRAIN CURRENT vs. OUPUT POWER
-20
VDS = 30 V
f1 = 860 MHz
f2 = 860.1 MHz
-30
IDQ = 0.4 A
IDS
-40
IM3
IDQ = 1.0 A
-50
IDQ = 0.4 A
-60
25
30
35
40
45
50
Average Output Power, POUT (dBm)
OUTPUT POWER/DRAIN EFFICIENCY
POWER GAIN vs. INPUT POWER
1000
f = 860 MHz
VDD = 30 V
IDQ = 150 mA x 2
100
Pout
10
100
ηD
GP
1
10
.1
12 16 20 24 28 32 36 40 44 48 52
Input Power, PIN (dBm)



Part Number NEM0899F01-30
Description N-Channel MOSFET
Maker NEC
Total Page 3 Pages
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