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NEM0899F01-30 Datasheet - NEC

N-Channel MOSFET

NEM0899F01-30 General Description

The NEM0899F01-30 is a high power enhancement mode Silicon MOSFET. Its design employs a vertical geometry for high drain to source breakdown voltage, a 1.3 mm x 28.8 mm gate, a gold metallization system, and a plasma silicon nitride layer on the surface of the transistor for long life and reliable o.

NEM0899F01-30 Datasheet (49.65 KB)

Preview of NEM0899F01-30 PDF

Datasheet Details

Part number:

NEM0899F01-30

Manufacturer:

NEC

File Size:

49.65 KB

Description:

N-channel mosfet.

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NEM0899F01-30 N-Channel MOSFET NEC

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