NEM0899F01-30 Description
The NEM0899F01-30 is a high power enhancement mode Silicon MOSFET. Its design employs a vertical geometry for high drain to source breakdown voltage, a 1.3 mm x 28.8 mm gate, a gold metallization system, and a plasma silicon nitride layer on the surface of the transistor for long life and reliable operation. The NEM0899F01-30 uses two chips in a pushpull configuration and internal input and output pro-matching...
NEM0899F01-30 Key Features
- HIGH OUTPUT POWER: 100 Watts
- HIGH GAIN: Linear Gain = 12 dB
- LOW INTERMODULATION DISTORTION
- HIGH DYNAMIC RANGE
- HIGH EFFICIENCY: ηD = 53%
- INTERNALLY MATCHED FOR THE 470-860 MHz BAND
- PUSH-PULL STRUCTURE