Full PDF Text Transcription for NESG2030M04 (Reference)
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NESG2030M04. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • • • • SiGe TECHNOLOGY: fT = 60 GHz Process LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXI...
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fT = 60 GHz Process LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M04 DESCRIPTION The NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 µA to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance.
NESG2030M04 Datasheet
