• Part: NNCD5.6MG
  • Description: LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD
  • Category: Diode
  • Manufacturer: NEC
  • Size: 33.27 KB
Download NNCD5.6MG Datasheet PDF
NEC
NNCD5.6MG
NNCD5.6MG is LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD manufactured by NEC.
FEATURES - Based on the electrostatic discharge immunity test (IEC61000-42), the product assures the minimum endurance of 30 k V. - Capacitance is small with 20 p F TYP. (at VR = 0 V, f = 1 MHz). It is excellent in the frequency characteristic. - With 4 elements mounted (mon anode) in the SC-74A package, that product can cope with high density assembling. 1.1 to 1.4 0.8 APPLICATIONS - External interface circuit E.S.D. protection in the high-speed data munication bus such as USB. (SC-74A) PIN CONNECTION 5 4 MAXIMUM RATINGS (TA = 25°C) Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj Tstg 200 m W (Total) 2 W (t = 10 µs 1 pulse) Fig.5 150°C - 55°C to +150°C 1: 2: 3: 4: 5: 1 2 3 K1 A K2 K3 K4 0 to 0.1 Cathode 1 Anode (mon) Cathode 2 Cathode 3 Cathode 4 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13910EJ2V0DS00 (2nd edition) Date Published February 2000 N CP(K) Printed in Japan © - 0.06 +0.1 NNCD5.6MG to NNCD6.8MG ELECTRICAL CHARACTERISTICS (TA = 25°C) (A-K1, A-K2, A-K3, A-K4) Dynamic Note 2 Breakdown Voltage VBR (V) Type No. MIN. NNCD5.6MG NNCD6.2MG NNCD6.8MG 5.3 5.7 6.2 Note 1 Impedance ZZ (Ω) Reverse Leakage IR (µA) VR (V) 2.5 3.0 3.5 TYP. 26 20 20 Capacitance Ct (p F) TEST CONDITION VR = 0 V f = 1 MHz E.S.D Voltage (k V) TEST CONDITION C = 150 p F R = 330 Ω...