p-channel power mosfet.
* Super low on-state resistance RDS(on)1 = 17.0 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 23.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
* Low input capacitance Ciss .
The NP36P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
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