Download the NP80N055NHE datasheet PDF.
This datasheet also covers the NP80N055CHE variant, as both devices belong to the same switching n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Key Features
Channel temperature 175 degree rated.
Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A).
Low input capacitance Ciss = 2400 pF TYP.
Built-in gate protection diode (TO-262)
(TO-263)
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Full PDF Text Transcription for NP80N055NHE (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NP80N055NHE. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055EHE, NP80N055KHE NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE SWITCHING N-CHANNEL POWER MOS FET www.DataSheet4U.com D...
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E, NP80N055NHE SWITCHING N-CHANNEL POWER MOS FET www.DataSheet4U.com DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP80N055EHE-E1-AY NP80N055EHE-E2-AY NP80N055KHE-E1-AY NP80N055KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP80N055CHE-S12-AZ NP80N055DHE-S12-AY NP80N055MHE-S18-AY NP80N055NHE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8
NP80N055NHE Datasheet
