NP80N055NHE Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
- Low input capacitance Ciss = 2400 pF TYP
- Built-in gate protection diode (TO-262)
- Part: NP80N055NHE
- Manufacturer: NEC (official site)
- Size: 243.32 KB
Other NP80N055NHE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
NP80N055NDG | N-CHANNEL POWER MOS FET |
NEC |
NP80N055 | Switching N-Channel Power MOS FET |
|
NEC |
NP80N055CLE | Switching N-Channel Power MOSFET |
|
NEC |
NP80N055DLE | Switching N-Channel Power MOSFET |
|
NEC |
NP80N055ELE | Switching N-Channel Power MOSFET |
NP80N055NHE Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP80N055CHE-S12-AZ NP80N055DHE-S12-AY NP80N055MHE-S18-AY NP80N055NHE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ.