NP83P06PDG transistor equivalent, mos field effect transistor.
* Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A)
* High current rating: ID(DC.
The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
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