NP88N04NHE Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
- Low input capacitance Ciss = 7300 pF TYP
- Built-in gate protection diode (TO-262)
- http://..net/
NP88N04NHE is MOS FIELD EFFECT TRANSISTOR manufactured by NEC.
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
NP88N04NUG | N-CHANNEL POWER MOS FET |
Renesas |
NP88N04KUG | N-CHANNEL POWER MOS FET |