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  NEC Electronic Components Datasheet  

PA1436AH Datasheet

UPA1436AH

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DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1436A
NPN SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1436A is NPN silicon epitaxial Darlington
www.DataSheet4U.comPower Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
Easy mount by 0.1 inch of terminal interval.
High hFE for Darlington Transistor.
C-E Reverce Diode built in.
High Speed Switching.
ORDERING INFORMATION
Part Number
µPA1436AH
Package
10 Pin SIP
Quality Grade
Standard
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO
150
V
Collector to Emitter Voltage VCEO
100
V
Emitter to Base Voltage
VEBO
8
V
Collector Current (DC)
IC(DC)
±3 A/unit
Collector Current (pulse)
IC(pulse)* ±5
A/unit
Base Current (DC)
IB(DC)
0.3 A/unit
Total Power Dissipation
PT1**
3.5
W
(Ta = 25 ˚C)
Total Power Dissipation
PT2**
28
W
(Tc = 25 ˚C)
Junction Temperature
Tj
150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW 350 µs, Duty Cycle 2 %
** 4 Circuits
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
1.4 0.6 ±0.2
2.54
1.4
0.5 ±0.2
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3 579
2 468
1 10
(C)
(B)
R1 R2
(E)
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
R1 =.. 5 k
R2 =.. 1.3 k
Document No. IC-3482
(O.D. No. IC-8705)
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994


  NEC Electronic Components Datasheet  

PA1436AH Datasheet

UPA1436AH

No Preview Available !

µPA1436A
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC
Collector Leakage Current
Emitter Leakage Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Turn On Time
Storage Time
www.DataSheet4UF.aclol mTime
SYMBOL
ICBO
IEBO
hFE1
*
hFE2 *
*VCE(sat)
*VBE(sat)
ton
tstg
tf
MIN.
2000
1000
* PW 350 µs, Duty Cycle 2 % /pulsed
TYP.
1
1.8
0.3
1.5
0.4
MAX.
1
5
20000
1.5
2
UNIT
µA
mA
V
V
µs
µs
µs
TEST CONDITIONS
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 1.5 A
VCE = 2 V, IC = 3 A
IC = 1.5 A, IB = 1.5 mA
IC = 1.5 A, IB = 1.5 mA
IC = 1.5 A
IB1 = –IB2 = 3 mA
VCC =.. 50 V, RL = 33
See test circuit
SWITCHING TIME TEST CIRCUIT
VIN
PW
PW = 50 µs
Duty Cycle 2 %
RL = 33
IC
IB1
Base Current
Wave Form
T.U.T.
IB2
VCC = 50 V
VBB = –5 V
Collector Current
Wave Form
90 %
10 %
IB1
IB2
IC
ton tstg tf
2


Part Number PA1436AH
Description UPA1436AH
Maker NEC
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