UPA2450B Datasheet | NEC

DESCRIPTION The µ PA2450B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2450B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 1.85±0.1 0.145±0.05 (1.45) 0.8 MAX. 2 3 5 4 0.25 +0.1 -0.05 4.4±0.1 FEATURES - 2.5 V drive available - Low on-state resistance RDS(on)1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 27.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A) - Built-in G-S protection diode against ESD 5.0±0.1 0.05 +0 -0.05 (0.15) (0.9) ORDERING INFORMATION PART NUMBER PACKAGE (0.5) (2.2) Each lead has same dimensions. 5,6: Source 2 1,2: Source 1 4: Gate 2 3: Gate 1 7: Drain µ PA2450BTL 6PIN HWSON (4521) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Drain Current (pulse) Note2 Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20.0 ±12.0 ±8.6 ±80.0 2.5 0.7 150 - 55 to +150 V V A A W W °C °C Gate1 EQUIVALENT CIRCUIT Drain1 Drain2 Total Power Dissipation (2 units) Channel Temperature Storage Temperature Body Diode Gate2 Gate Protection Diode Source2 Total Power Dissipation (2 units) Note3 Gate Protection Diode Source1 Notes 1. Mounted on ceramic board of 50 cm2 x 1.1 mm 2. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 3. Mounted on FR-4 board of 50 cm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country....