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  NEC Electronic Components Datasheet  

UPA2450B Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2450B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µ PA2450B is a switching device, which can be driven
directly by a 2.5 V power source.
The µ PA2450B features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
FEATURES
2.5 V drive available
Low on-state resistance
RDS(on)1 = 17.5 mMAX. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)2 = 18.5 mMAX. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 22.0 mMAX. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 27.5 mMAX. (VGS = 2.5 V, ID = 4.0 A)
Built-in G-S protection diode against ESD
PACKAGE DRAWING (Unit: mm)
16
25
34
4.4±0.1
5.0±0.1
7
(0.15)
(0.9)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA2450BTL
6PIN HWSON (4521)
(0.5)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20.0
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation (2 units) Note1
Total Power Dissipation (2 units) Note3
VGSS
ID(DC)
ID(pulse)
PT1
PT2
±12.0
±8.6
±80.0
2.5
0.7
Channel Temperature
Tch 150
Storage Temperature
Tstg 55 to +150
Notes 1. Mounted on ceramic board of 50 cm2 x 1.1 mm
2. PW 10 µs, Duty Cycle 1%
3. Mounted on FR-4 board of 50 cm2 x 1.1 mm
V
V
A
A
W
W
°C
°C
(2.2)
Each lead has same dimensions.
1,2: Source 1
5,6: Source 2
3: Gate 1
4: Gate 2
7: Drain
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16635EJ1V0DS00 (1st edition)
Date Published January 2004 NS CP(K)
Printed in Japan
2004


  NEC Electronic Components Datasheet  

UPA2450B Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

No Preview Available !

µ PA2450B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 20.0 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±12.0 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10.0 V, ID = 1.0 mA
VDS = 10.0 V, ID = 4.0 A
VGS = 4.5 V, ID = 4.0 A
RDS(on)2 VGS = 4.0 V, ID = 4.0 A
RDS(on)3 VGS = 3.1 V, ID = 4.0 A
RDS(on)4 VGS = 2.5 V, ID = 4.0 A
Input Capacitance
Ciss VDS = 10.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = 10.0 V
Rise Time
tr ID = 4.0 A
Turn-off Delay Time
td(off)
VGS = 4.0 V
Fall Time
tf RG = 6
Total Gate Charge
QG VDD = 16.0 V
Gate to Source Charge
QGS VGS = 4.0 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 8.6 A
IF = 8.6 A, VGS = 0 V
Reverse Recovery Time
trr IF = 8.6 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
Note Pulsed: PW 350 µs, Duty Cycle 2%
MIN.
0.50
3.5
11.0
11.5
12.0
15.3
TYP.
12.5
13.0
14.5
18.0
520
133
92
21
86
124
107
8.0
1.3
3.3
0.83
128
129
MAX.
1.0
±10.0
1.50
17.5
18.5
22.0
27.5
UNIT
µA
µA
V
S
m
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet G16635EJ1V0DS


Part Number UPA2450B
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Maker NEC
Total Page 8 Pages
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