MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
The µ PA2450B is a switching device, which can be driven
directly by a 2.5 V power source.
The µ PA2450B features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 27.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD
PACKAGE DRAWING (Unit: mm)
6PIN HWSON (4521)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation (2 units) Note1
Total Power Dissipation (2 units) Note3
Tstg −55 to +150
Notes 1. Mounted on ceramic board of 50 cm2 x 1.1 mm
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Mounted on FR-4 board of 50 cm2 x 1.1 mm
Each lead has same dimensions.
1,2: Source 1
5,6: Source 2
3: Gate 1
4: Gate 2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16635EJ1V0DS00 (1st edition)
Date Published January 2004 NS CP(K)
Printed in Japan