UPA2510 Key Features
- Low on-state resistance RDS(on)1 = 10.1 mΩ MAX. (VGS = -10.0 V, ID = -9.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = -4.5 V, ID =
- Low Ciss: 3000 pF TYP. (VDS = -10.0 V, VGS = 0 V)
- µ PA2510 has a thin surface mount package with a heat
- Part: UPA2510
- Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR
- Manufacturer: NEC
- Size: 189.97 KB
Related NEC Datasheets
| Part Number | Description |
|---|---|
| UPA2502 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
| UPA2503 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
| UPA2001C | NPN Silicon Epitaxial Darlington Transistor Array |
| UPA2002C | NPN Silicon Epitaxial Darlington Transistor Array |
| UPA2003C | NPN Silicon Epitaxial Darlington Transistor Array |