Part number:
UPA2510
Manufacturer:
NEC
File Size:
189.97 KB
Description:
P-channel mos field effect transistor.
* spreader. The land size is same as 8-pin TSSOP.
* Low on-state resistance RDS(on)1 = 10.1 mΩ MAX. (VGS =
* 10.0 V, ID =
* 9.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS =
* 4.5 V, ID =
* 9.0 A)
* Low Ciss: 3000 pF TYP. (VDS =
* 10.0 V, VGS = 0 V) +0.05 0.25
UPA2510
NEC
189.97 KB
P-channel mos field effect transistor.
📁 Related Datasheet
UPA2502 N-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)
UPA2503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)
UPA2520 MOS FIELD EFFECT TRANSISTOR (Renesas)
UPA2521 MOS FIELD EFFECT TRANSISTOR (Renesas)
uPA2550 DUAL P-CHANNEL MOSFET (Renesas)
uPA2560 Dual N-CHANNEL MOSFET (Renesas)
uPA2590 N- AND P-CHANNEL MOSFET (Renesas)
UPA2592T1H N- AND P-CHANNEL MOSFET (Renesas)
UPA2001C NPN Silicon Epitaxial Darlington Transistor Array (NEC)
UPA2002C NPN Silicon Epitaxial Darlington Transistor Array (NEC)