UPD16873B Key Features
- Low On resistance. (The summation of the on resistance of the upper and lower MOSFET) RON = 0.6 Ω (TYP.)
- Low consumption power for 3 aspects all-wave PWM drive method
- By the PWM-drive form and the IND pulse pattern, 4 kind, line-up
- Built in STANDBY terminal and off the inner circuit at the time of the standby
- Built in START/STOP terminal. Operating short brake works, when ST/SP terminal is off state
- Supply voltage: 5 V drive
- Low consumption current: IDD = 3 mA (MAX.)
- Over current protection circuit built in. (Setting by outside resistance)
- Hall bias switch built in. (synchronized STB signal.)
- Loading into 30-pin plastic TSSOP (300 mil)