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UPD4443362 - 4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE

Description

The µPD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell.

Features

  • Fully synchronous operation.
  • HSTL Input / Output levels 5.
  • Fast clock access time : 3.8 ns (133 MHz).
  • Asynchronous output enable control : /G.
  • Byte write control : /SBa (DQa1-9), /SBb (DQb1-9), /SBc (DQc1-9), /SBd (DQd1-9).
  • Common I/O using three-state outputs.
  • Internally self-timed write cycle.
  • Late write with 1 dead cycle between Read-Write.
  • 3.3 V (Chip) / 1.5 V (I/O) supply.
  • 100-pin plastic LQFP packag.

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Datasheet Details

Part number UPD4443362
Manufacturer NEC
File Size 113.77 KB
Description 4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE
Datasheet download datasheet UPD4443362 Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4443362 4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The µPD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The µPD4443362 is suitable for applications which require synchronous operation, high-speed, low voltage, highdensity memory and wide bit configuration, such as cache and buffer memory. The µPD4443362 is packaged in 100-pin plastic LQFP with a 1.4 mm package thickness for high density and low capacitive loading. Features • Fully synchronous operation • HSTL Input / Output levels 5 • Fast clock access time : 3.
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