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UPD4564841 Datasheet 64M-bit Synchronous DRAM

Manufacturer: NEC (now Renesas Electronics)

Download the UPD4564841 datasheet PDF. This datasheet also includes the UPD4564441 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (UPD4564441-NEC.pdf) that lists specifications for multiple related part numbers.

General Description

The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

All inputs and outputs are synchronized with the positive edge of the clock.

Overview

DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank,.

Key Features

  • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge.
  • Pulsed interface.
  • Possible to assert random column address in every cycle.
  • Quad internal banks controlled by A12 and A13 (Bank Select).
  • Byte control (×16) by LDQM and UDQM.
  • Programmable Wrap sequence (Sequential / Interleave).
  • Programmable burst length (1, 2, 4, 8 and full page).
  • Programmable /CAS latency (2 and 3).
  • Automatic prech.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Elpida Memory Logo UPD4564841 (UPD4564841/441/163) 64M-bit SDRAM Elpida Memory

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
UPD4564163 64M-bit Synchronous DRAM
UPD4564163G5 64M Bit SDRAM
UPD4564323 64M-bit Synchronous DRAM 4-bank/ LVTTL
UPD4564441 64M-bit Synchronous DRAM
UPD45128163 128M-bit Synchronous DRAM 4-bank/ LVTTL
UPD45128441 128M-bit Synchronous DRAM 4-bank/ LVTTL
UPD45128841 128M-bit Synchronous DRAM 4-bank/ LVTTL
UPD4516161 16M Bit Synchronous DRAM
UPD4516161A 16M Bit Synchronous DRAM
UPD4516421 16M-Bit Synchronous DRAM