UPD5747T6J - LOW NOISE AND HIGH GAIN AMPLIFIER

Product Overview

NEC

Part number	UPD5747T6J
Manufacturer	NEC
File Size	90.13 KB
Description	LOW NOISE AND HIGH GAIN AMPLIFIER
Datasheet	UPD5747T6J Datasheet
Additional preview pages of the UPD5747T6J datasheet.

The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.

Low Noise.
High Gain : NV =.
101 dBV TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
102 dBV TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ : GV = +5.7 dB TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ.
Low Consumption Current : IDD = 190 μA TYP. @ VDD = 1.5 V, RL = 2.2 kΩ.
Built-in the capacitor for RF noise immunity.
High ESD voltage.
3-pin thin-type lead-less minimol.

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Published: Apr 23, 2011 |