UPD5747T6J Datasheet LOW NOISE AND HIGH GAIN AMPLIFIER

Manufacturer: NEC (now Renesas Electronics)

Datasheet Details

Part number	UPD5747T6J
Manufacturer	NEC (now Renesas Electronics)
File Size	90.13 KB
Description	LOW NOISE AND HIGH GAIN AMPLIFIER
Download	UPD5747T6J Download (PDF)

The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.

This device exhibits low noise and high voltage gain characteristics.

The package is 3-pin thin-type lead-less minimold, suitable for surface mount.

DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF.

Low Noise.
High Gain : NV =.
101 dBV TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
102 dBV TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ : GV = +5.7 dB TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ.
Low Consumption Current : IDD = 190 μA TYP. @ VDD = 1.5 V, RL = 2.2 kΩ.
Built-in the capacitor for RF noise immunity.
High ESD voltage.
3-pin thin-type lead-less minimol.

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