UPD70F3617 Overview
User’s Manual V850ES/Fx3-L 32-bit Single-Chip Microcontroller Hardware V850ES/FE3-L: Precaution against ESD for semiconductors Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.